HJT solar cells have double-sided structure design which can absorb incident light and scattered light from both sides, using a PECVD, very thin silicon intrinsic passivation layer and P-type silicon doped layer are formed on the top side of wafer-type monocrystalline silicon N after texturing and surface cleaning, then on the other side a very thin intrinsic silicon passive layer and N-type silicon doped layer is deposited.
After deposition of amorphous silicon layer stacks, PVD magnetron sputtering coating technology is applied to deposit transparent oxide conductive film (TCo) and metal stack on both sides of the cells.
Finally, the metal grids on both sides are formed by our innovative metallization technology.
Advantages of HJT Technology
High double-sided ratio
HJT Photovoltaic Modules
Using a high efficiency heterojunction solar cell, up to more than 21.5% module efficiency.
Leading Half-cut HJT cell technology.
The more stable feed temperature coefficient of -0.24% results in a stable yield gain.
Using N-type wafer, no LID caused by B-O pair
Excellent PID resistance.
The 85% double-sided factor brings greater yield gain from back to back.
Development Direction Of High Efficiency Solar Cell Industry